r 3 000 200m a 3 .0 kv high v oltage s ilicon r ectifier d iode ----------------------------------------------------------------------------------------------------------------------------- ------ - gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9638 201 8 - 0 4 1 / 2 introduce : hvgt high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers . f eatures: 1. low leakage . 2. low forward voltage drop . 3. high current capabil ity . 4. conform to rohs and sgs . 5. epoxy resin molded in vacuumhave anticorrosion in the surface . a pplications: 1. rectifier for high voltage power supply. 2. high voltage transformer rectifier. 3. doubler rectifier circuit . 4. accelerator power supply . mechanical data: 1. case : epoxy resin molding. 2. terminal: w elding axis . 3. net weight : 0.4 grams (approx) . shape display: s ize: (unit:mm) hvgt name : do - 15 maximum ratings and characteristics : ( absolute maximum ratings ) items symbols condition data v alue units repetitive peak renerse voltage v rrm t a = 2 5c 3 000 v non - repetitive peak renerse voltage v r s m t a = 2 5c 21 00 v average forward current maximum i favm t a = 5 0 c 2 00 m a t oil = 5 5c -- a non - repetitive forward surge current i fsm t a =25c ; 6 0 hz h alf - s ine w ave ; 8.3 ms 30 a junction temperature t j 1 50 c allowable operation case temperature tc - 65 ~+ 1 50 c storage temperature t stg - 65 ~ + 1 50 c electrical characteristics: t a =25c ( unless o therwise s pecified ) items symbols condition data value units maximum forward voltage drop v f m at 25c ; at i favm 4 .0 v maximum reverse current i r1 at 25c ; at v rrm 5.0 ua i r2 at 1 00 c ; at v rrm 40 ua maximum reverse recovery time t rr a t 25c ; i f = 0.5i r ; i r = i favm ; i rr = 0. 25 i r -- ns junction capacitance c j at 25c ; v r = 4.0 v ; f=1mhz 30 pf
r 3 000 200m a 3 .0 kv high v oltage s ilicon r ectifier d iode ----------------------------------------------------------------------------------------------------------------------------- ------ - gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9638 201 8 - 0 4 2 / 2 fig 1 forward current derating curve fig 2 non - repetitive surge current cycles ( 6 0hz) marking type code cathode mark r 3 000 r 3 000 hvgt
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